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30W, 32V, DC-3.5 GHz Power Transistor: T1G4003532-FS Datasheet

2015-09-01 15:20:05| rfglobalnet Downloads

The T1G4003532-FS is a 30W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

30W, 32V, DC-3.5 GHz Power Transistor: T1G4003532-FL Datasheet

2015-09-01 14:51:23| rfglobalnet Downloads

The T1G4003532-FS is a 30W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 
 

45W, 32V, DC-3.5 GHz Power Transistor: T1G4004532-FS Datasheet

2015-09-01 13:42:25| rfglobalnet Downloads

The T1G4004532-FS is a 45W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

45W, 32V, DC-3.5 GHz Power Transistor: T1G4004532-FL Datasheet

2015-09-01 13:29:06| rfglobalnet Downloads

The T1G4004532-FL is a 45W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

2x120W, 36V, DC-3.5 GHz Power Transistor: T1G4020036-FS Datasheet

2015-09-01 13:18:37| rfglobalnet Downloads

The T1G4020036-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

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